Home > IGBT Power Module >

C- Series Half Bridge IGBT Module ,1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines

Product Categories

Electric Valve Actuator [96]
Power Station Valve [178]
Electronic Control Relay [71]
ESP Controller [38]
High Performance Ignition System [49]
Digital Speed Indicator [107]
Rotational Speed Sensor [105]
Coal Feeder Spare [12]
3 Phase Electric Motors [41]
Weigh Feeder Controller [9]
Magnetic Level Gauges [50]
Transformer Protection Relay [31]
DC Contactor [55]
Low Voltage Protection Devices [172]
Electro Hydraulic Thruster Brake [38]
IGBT Power Module [19]

Hontai Machinery and equipment (HK) Co. ltd

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

C- Series Half Bridge IGBT Module ,1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines

Name: C Series Half Bridge IGBT Module 1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : FF450R12KT4

Place of Origin : China

MOQ : 1 set

Payment Terms : T/T

Supply Ability : 1000sets

Delivery Time : 25 days after signing the contract

Packaging Details : Wooden box packing

VCES : 1200V

IC nom : 450A

ICRM : 900A

Applications : Motor Drives

Electrical Features : Low Switching Losses

Contact Now

half-bridge 62mm C-series 1200 V, 450 A dual IGBT modules FF450R12KT4 Wind Turbines

Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

• Wind Turbines

Electrical Features

• Extended Operation Temperature Tvj op

• Low Switching Losses

• Low VCEsat

• Unbeatable Robustness

• VCEsat with positive Temperature Coefficient

Mechanical Features

• 4 kV AC 1min Insulation

• Package with CTI > 400

• High Creepage and Clearance Distances

• High Power Density

• Isolated Base Plate

• Standard Housing

IGBT,Inverter

Maximum Rated Values

Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Continuous DC collector current	TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C	IC nom IC	450 580	A A
Repetitive peak collector current	tP = 1 ms	ICRM	900	A
Total power dissipation	TC = 25°C, Tvj max = 175°C	Ptot	2400	W
Gate-emitter peak voltage		VGES	+/-20	V

Characteristic Values

Collector-emitter saturation voltage	IC = 450 A, VGE = 15 V Tvj = 25°C IC = 450 A, VGE = 15 V Tvj = 125°C IC = 450 A, VGE = 15 V Tvj = 150°C	VCE sat		1,75 2,05 2,10	2,15	V VV
Gate threshold voltage	IC = 17,0 mA, VCE = VGE, Tvj = 25°C	VGEth	5,2	5,8	6,4	V
Gate charge	VGE = -15 V ... +15 V	QG		3,60		µC
Internal gate resistor	Tvj = 25°C	RGint		1,9		Ω
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies		28,0		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres		1,10		nF
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES			5,0	mA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES			400	nA
Turn-on delay time, inductive load	IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C	td on		0,16 0,17 0,18		µs µs µs
Rise time, inductive load	IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C	tr		0,045 0,04 0,05		µs µs µs
Turn-off delay time, inductive load	IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C	td off		0,45 0,52 0,54		µs µs µs
Fall time, inductive load	IC = 450 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C	tf		0,10 0,16 0,18		µs µs µs
Turn-on energy loss per pulse	IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 9000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,0 Ω Tvj = 150°C	Eon		19,0 30,0 36,0		19,0 30,0 36,0
Turn-off energy loss per pulse	IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,0 Ω Tvj = 150°C	Eoff		26,0 40,0 43,0		mJ mJ mJ
SC data	VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C	ISC		1800		A
Thermal resistance, junction to case	IGBT / per IGBT	RthJC			0,062	K/W
Thermal resistance, caseto heatsink	EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)	RthCH		0,03		K/W
Temperature under switching conditions		Tvj op	-40		150	°C

Product Tags:

high power igbt module

automotive igbt

Quality C- Series Half Bridge IGBT Module ,1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines for sale

C- Series Half Bridge IGBT Module ,1200V 450A Dual IGBT Module FF450R12KT4 Wind Turbines Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hontai Machinery and equipment (HK) Co. ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!